IQE Profile
IQE plc operates as a merchant supplier of GaAs Heterojunction Bipolar Transistor (HBT) epitaxial wafers grown by Metal Organic Vapor Phase Epitaxy (MOVPE). Utilizing its proven HBT manufacturing process, IQE offers both GaInP and AlGaAs emitter layer HBT epitaxial wafers on 3', 4', and 6' GaAs substrates for wireless and telecommunication applications. IQE’s high volume production throughput and engineering capabilities are unrivaled within the compound semiconductor industry and are now being successfully utilized for the commercialization of GaAs HBT epitaxial wafers.
Products
IQE offers the industry’s most diverse range of products and services with 2 inches, 3 inches, 4 inches, and 6 inches epitaxial wafers for MESFET, PHEMT, HBT, Laser, VCSEL, LED, APD, and PIN devices, utilized in wireless, optical fiber, satellite, medical, consumer, and automotive applications.
IQE is a merchant supplier of GaAs Heterojunction Bipolar Transistor (HBT) epitaxial wafers grown by Metal Organic Vapor Phase Epitaxy (MOVPE). Utilizing its proven HBT manufacturing process, IQE offers both GaInP and AlGaAs emitter layer HBT epitaxial wafers on 3', 4', and 6' GaAs substrates for wireless and telecommunication applications.
IQE is a merchant supplier of InP Heterojunction Bipolar Transistor (HBT) epitaxial wafers grown by Molecular Beam Epitaxy (MBE). Utilizing its proven manufacturing process, IQE offers InP epitaxial wafers on 3' and 4' InP substrates for high-frequency wireless, point-to-point radio, and optical fiber communication applications.
IQE (PHEMT) epitaxial wafers grown by Molecular Beam Epitaxy (MBE). Utilizing its proven PHEMT manufacturing process, IQE offers both GaInP and AlAs etch stop layer PHEMT epitaxial wafers on 3', 4', and 6' GaAs substrates for discrete and MMIC applications.
IQE is the merchant supplier of GaInAs p-i-n photodetector epitaxial wafers grown by Metal Organic Vapor Phase Epitaxy (MOVPE). Utilizing its proven high-volume manufacturing process, IQE offers GaInAs and GaInAsP p-i-n photodetector epitaxial wafers on 2 inches, 3 inches, and 4 inches n-type or semi-insulating InP substrates for telecommunication applications.
IQE is a merchant supplier of visible resonant cavity light emitting diode (RCLED) epitaxial wafers grown by Metal Organic Vapor Phase Epitaxy (MOVPE). Utilizing its proven high-volume manufacturing process, IQE offers visible RCLED epitaxial wafers on 2 inches and 3 inches GaAs substrates for data communication, optical communication, sensing, and positioning applications. Integrated Optical Power (mW)
IQE is a merchant supplier of vertical cavity surface emitting laser (VCSEL) epitaxial wafers grown by Metal Organic Vapor Phase Epitaxy (MOVPE). Utilizing its proven high-volume manufacturing process, IQE offers VCSEL epitaxial wafers on 2 inches, 3 inches, and 4 inches GaAs and 2 inches and 3 inches InP substrates for data communication, data storage, and telecommunication applications.
IQE is a merchant supplier of GaAs based MQW laser wafers grown by Metal Organic Vapour Phase Epitaxy (MOVPE). Utilising its manufacturing process, IQE offers 635-690nm LD epitaxial wafers on 2/3 GaAs substrates for applications, including DVD, Industrial, laser-pointer and medical (PDT).
IQE is a merchant supplier of InP based MQW laser wafers grown by Metal Organic Vapour Phase Epitaxy (MOVPE). Utilizing its manufacturing process, IQE offers 1.3um LD epitaxial wafers on 2 inch and 3 inch InP substrates for date communication and telecommunication applications.
IQE is a merchant supplier of InP based MQW laser wafers grown by Metal Organic Vapour Phase Epitaxy (MOVPE). Utilizing its manufacturing process, IQE offers 1055um LD epitaxial wafers on 2 inch and 3 inch InP substrates for date communication and telecommunication applications.
Significant Events
International Quantum Epitaxy plc, in October 2008, announced formal opening of its new facility in Tampines, Singapore, following the relocation of its Asia manufacturing facility. The new plant would produce advanced semiconductor wafers for wireless applications, such as mobile phones and WiFi devices but would also provide capacity for new products, such as materials for advanced electronics and high-efficiency solar cells.
History
IQE plc was founded in 1988.
